- Hot Wall Silicon Epitaxy system patented technology
- Heaters, chamber, injector process gas inserts, and susceptor are all silicon carbide coated graphite
- Susceptor is heated uniformly by dividing heaters into precision controlled zones system is water cooled and runs very quiet
- Through recipe and mfc control adjustments both thickness and resistivity profiles can be tuned independently to one another.
- Pid ramping and control of five zones (front/rear, left/right, center) allows easy accurate slip tuning.
- Temperature is measured by five thermocouples
- Software is easily operated
- Remote access to the reactor data
- Ability to data log any i/o or function on the system
- Touch screen/keyboard control
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